#Pc1d material files full#

Experimentally, the fabricated SiNWs-based solar cell with etching time of 20В min attained the highest conversion efficiency of 15.9% and the value was very close to simulated results. The highest conversion efficiency of ~вЂ‰16.2% is observed when the average length of SiNWs and reflectance were ~вЂ‰2.52В Ојm andвЂ‰~вЂ‰2.25%, respectively. In this simulation, the length of SiNWs and reflectance were selected as input parameters to instigate the power conversion and quantum efficiencies of solar cells.

A model was designed using PC1D simulation to evaluate the photovoltaic (PV) parameters of NWs textured Si wafer-based solar cells without AR layer.

#Pc1d material files full#

The well-defined grown NWs textured on Si wafer exhibited the low average reflectance of ~вЂ‰2.25% in the full visible-NIR spectrum from 400 to 1000В nm which was well matched to the simulated average reflectance of 2.23%. The nanostructures over Si wafer were optimized in terms of sizes, lengths and densities by changing the etching conditions and thoroughly examined their growth and optoelectrical properties.

This work reports on the surfaceВ architectural of Si wafer (p-type) by growing the nanowires (NWs)-like structures through cost-effective wet-controlled etching method. Tremendous works have been devoted on reducing the materials costs and searching a low-cost antireflection (AR) layer in silicon (Si) solar cells.